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机电学院学术报告:能谷电子学材料前瞻
2020-01-12 10:21

报告题目:Valleytronics:A materials perspective/能谷电子学材料前瞻

报告时间:2020年2月19日(周三) 10:00 AM

报告地点:青岛科技大学机电工程学院518报告厅

报告人:Udo Schwingenschlogl (德籍)

 

Abstract /报告摘要

Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. We show that magnetically doped WS2can be used as substrate that avoids detrimental effects and at the same time induces valley polarization. Broken inversion symmetry due to the presence of WS2opens a substantial band gap in silicene and germanene, and the induced spin polarization in conjunction with proximity-enhanced spin-orbit coupling creates sizable valley polarization. We also discuss the possibility to generate valley polarization in 2D MoS2by substitutional magnetic doping. An unprecedented physical-chemical mechanism, based on delicate interplay between defect state and extended moment formation, is identified as source of the valley polarization.

硅和锗烯是谷电子学领域的关键材料。然而,支撑电子活性介质所必需的与基板之间的相互作用成为此类谷电子学材料发展的主要障碍。我们发现磁性掺杂的WS2可以用作避免此类不利影响,并同时引起谷极化的基板。由于WS2的存在而使反演对称性破裂,从而在硅烯和锗烯中打开了一个明显的带隙,并且感应的自旋极化与邻近增强的自旋轨道耦合一起产生了相当大的谷底极化。除此之外,我们还讨论了通过替代磁掺杂在2D MoS2中产生谷极化的可能性。基于缺陷状态和延长的矩形成之间的微妙相互作用,一种前所未有的物理化学机制被认为是谷极化的来源。

Biography/报告人简介:

Udo Schwingenschlögl is a Professor of Solar Center at King Abdullah University of Science and Technology (KAUST). His research interests in condensed matter physics and first-principles materials modeling focus on two-dimensional materials, interface and defect physics, correlated materials, thermoelectric materials, metal-ion batteries, nanoparticles, and quantum transport. Unitl now, more than 400 related papers has been publised.

Udo教授是一名出色的理论模拟科学工作者,目前是沙特国王科技大学太阳能中心教授。他的研究兴趣主要包括材料模拟、第一性原理计算、新型功能材料、量子传输,二维材料和纳米材料。目前,他的相关研究成果已经发表400多篇SCI论文,其中包括PRL、AM、AEM等的TOP杂志。